| PART |
Description |
Maker |
| GS71108TP-10 GS71108TP-12 GS71108TP-12I GS71108TP |
15ns 128K x 8 1Mb asynchronous SRAM
12ns 128K x 8 1Mb asynchronous SRAM
10ns 128K x 8 1Mb asynchronous SRAM
128K X 8 STANDARD SRAM, 10 ns, PDSO32 0.400 INCH, SOJ-32
128K X 8 STANDARD SRAM, 12 ns, PBGA48 6 X 8 MM, 0.75 MM PITCH, FBGA-48
128K X 8 STANDARD SRAM, 12 ns, PDSO32 0.300 INCH, SOJ-32
128K X 8 STANDARD SRAM, 15 ns, PBGA48 6 X 8 MM, 0.75 MM PITCH, FBGA-48
128K X 8 STANDARD SRAM, 15 ns, PDSO32
|
GSI[GSI Technology]
GSI Technology, Inc.
|
| GS71116ATP GS71116ATP-10 GS71116ATP-10I GS71116ATP |
1Mb Asynchronous SRAM
|
http://
List of Unclassifed Manufacturers
ETC[ETC]
|
| L083WC2AT2 |
1Mb Ultra-Low Power Asynchronous CMOS SRAM
|
NanoAmp Solutions, Inc.
|
| N01L163WN1AT2-55I N01L163WN1A N01L163WN1AB2-55I N0 |
1Mb Ultra-Low Power Asynchronous CMOS SRAM
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| N01L1618N1A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit
|
NanoAmp Solutions
|
| N01L83W2AT5I N01L83W2AT5IT N01L83W2AN25I N01L83W2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 8 bit
1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 8 bit
|
ON Semiconductor
|
| N01L83W2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 8 bit
|
ON Semiconductor
|
| N01L63W2AB25I N01L63W2AB25IT N01L63W2AT5I N01L63W2 |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K ? 16 bit
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit
|
ON Semiconductor
|
| N01L163WN1A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit
|
NanoAmp Solutions
|
| M48T129V-70PM1 M48T129V-85PM1 M48T129Y-70PM1 M48T1 |
3.3V-5V 1Mb (128K x 8) Timekeeper SRAM(1Mb TIMERKEEPEER SRAM)
5.0 or 3.3V, 1 Mbit (128 Kbit x 8) TIMEKEEPER SRAM
|
意法半导
STMicroelectronics
|
| MT58L64L18F MT58L32L32F MT58L32L36F |
32K x 323.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM)
32K x 363.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出，流通式同步脉冲静态RAM)
64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 64K的18.3V的I / O的流量通过SyncBurst的SRAM兆，3.3V的输输出，流通式同步脉冲静态内存）
|
Micron Technology, Inc.
|
| R1RP0416DSB-2PR R1RP0416D R1RP0416DGE-2LR R1RP0416 |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (256-kword X 16-bit)
From old datasheet system
|
http://
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
